Title :
Extremely high packaging densities by operating integrated circuits with r.f. power
Author_Institution :
Siemens AG, Halbleiterwerk, Mÿnchen, West Germany
Abstract :
A binary circuit configuration in which the transistors operate with r.f. power is described. This mode of operation allows the use of very simple circuitry. I.C. configurations in which this principle is exploited to maximum advantage are proposed.
Keywords :
monolithic integrated circuits; packaging; RF power; binary circuit configuration; high packaging densities; integrated circuits; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750250
