Title :
35-GHz transferred electron amplifiers
Author :
Goldwasser, R.E. ; Rosztoczy, F.E.
Author_Institution :
Varian Associates, Palo Alto, CA, USA
Abstract :
GaAs transferred electron amplifiers with 110-mW saturated power output at 35 GHz have been designed and fabricated. Small signal gain of 13 dB, 3-GHz bandwidth, and noise figures as low as 16.2 dB have been observed. Two basic amplifier designs which have been investigated are described.
Keywords :
Doping; Electrons; Gunn devices; Laplace equations; Maxwell equations; Noise figure; Poisson equations; Power amplifiers; Substrates; Transforms;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9305
