Title :
Bias-tuned double-drift impatt diodes for wide-bandwidth operation
Author :
Ying, R.S. ; Lee, D.H.
Author_Institution :
Hughes Aircraft Company, IEG Torrance Research Center, Torrance, USA
Abstract :
Double-drift IMPATT diodes with asymmetrical p- and n-type doping concentrations have exhibited output power levels of 3 mW to greater than 100 mW when bias tuned over a 20 GHz bandwidth in a Q band (40¿60 GHz) reduced waveguide circuit. Similar output powers were also measured for the same asymmetrical diodes at V band (50¿75 GHz) with tunable bandwidths of approximately 18 GHz.
Keywords :
IMPATT diodes; microwave oscillators; solid-state microwave circuits; solid-state microwave devices; tuning; Q-band reduced waveguide circuits; bias tuned double drift IMPATT diodes; wide bandwidth operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750264
