Title :
Common-gate GaAs f.e.t. oscillator
Author :
Omori, Mutsumi ; Nishimoto, C.
Author_Institution :
Varian Associates, Palo Alto, USA
Abstract :
Frequency tuning, power and noise characteristics of a common-gate GaAs f.e.t. oscillator were investigated. By changing the common-gate lead inductance, the frequency was changed by almost two octaves. The f.m. noise of the low-Q factor f.e.t. oscillator was at the same level as that of a medium-Q factor GaAs impatt oscillator.
Keywords :
field effect transistors; microwave oscillators; solid-state microwave circuits; common gate GaAs FET oscillator; frequency tuning; noise characteristics; power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750282
