Title :
Study on increasing the surge capability of a lightning surge protection, semiconductor device
Author_Institution :
NTT Interdisciplinary Res. Lab., Tokyo, Japan
fDate :
5/1/1993 12:00:00 AM
Abstract :
Design techniques for increasing the surge capability of a bidirectional two-terminal lightning surge protection thyristor for communications equipment are described. The relationships between surge capability and doping profiles with different p-base widths and n-base impurity concentrations are studied by analyzing failure modes and surge response characteristics. A narrow p-base width is found to be effective for increasing surge capability because it can reduce turn-on energy dissipation that leads to hot-spot failure. Furthermore, reducing the on-state energy dissipation can increase surge capability without increasing device size.
Keywords :
lightning protection; surge protection; telecommunication equipment; thyristor applications; communications equipment; doping profiles; failure modes; hot-spot failure; lightning surge protection; n-base impurity concentrations; on-state energy dissipation; p-base widths; semiconductor device; surge response characteristics; thyristor; turn-on energy dissipation; Cable shielding; Coaxial cables; Crosstalk; Lightning; Microwave theory and techniques; Power cables; Semiconductor devices; Surge protection; Surges; Wire;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on