Title :
Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors
Author :
Sturm, James C. ; Tokunaga, Kyoya
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
A simple model is presented to explain the dependence of the transconductance on the substrate bias in ultrathin silicon-on-insulator MOS transistors. Good agreement with experimental data is found. The model can also be used to predict the dependence of transconductance on the underlying oxide thickness.
Keywords :
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; SOI MOSFET; Si; model; substrate bias; transconductance; ultrathin MOS transistors; underlying oxide thickness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890827
