Title :
Transit-time-induced microwave negative resistance in Ga1-xAlxas--GaAs heterostructure diodes
Author :
Sitch, J.E. ; Majerfeld, A. ; Robson, P.N. ; Hasegawa, Fumihiro
Author_Institution :
University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield, UK
Abstract :
Following recent experimental observations by Immorlica and Pearson that the saturated drift velocity of electrons in Ga0.62Al0.38As is considerably lower than in GaAs, a heterostructure transit-time diode is proposed. The resulting device is shown to have a relatively large negative resistance, a small Q factor and low noise measure. Large-signal calculations predict a maximum efficiency of 18%.
Keywords :
p-n heterojunctions; semiconductor diodes; solid-state microwave devices; transit time devices; Ga1-xAlxA-GaAs heterostructure diodes; Q factor; efficiency; microwave transit time diode; saturated drift velocity of electrons; transit time induced microwave negative resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750351
