Title :
p+-n-p+ BARITT-diode design
Author_Institution :
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Abstract :
p+-n-p+ BARITT diodes have been designed to give maximum output power at X band frequencies. Computed output power against frequency shows good agreement with measured powers. The dominant effect of the maximum n region electric field on output power is demonstrated.
Keywords :
semiconductor diodes; solid-state microwave devices; transit time devices; X-band frequencies; output power; p+-n-p+ BARITT diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750353
