DocumentCode
929745
Title
Alternative way for numerical steady-state analysis of forward-biased p-n junction devices
Author
Leturcq, Ph. ; Yague, A. Munoz
Author_Institution
Institut National des Sciences Appliquées de Toulouse, Toulouse, France
Volume
11
Issue
19
fYear
1975
Firstpage
465
Lastpage
466
Abstract
At large forward bias, quasineutrality holds in all regions of p-n devices. As a consequence, accurate numerical solutions of the transport equations can be obtained without involving the treatment of Poisson´s equation. A new approach is thus proposed which avoids convergence problems and excessive computation time in numerical studies of forward characteristics of p-n devices, rectifiers and thyristors.
Keywords
p-n junctions; semiconductor device models; solid-state rectifiers; thyristors; forward biased p-n junction devices; numerical steady state analysis; rectifiers; thyristors; transport equations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750357
Filename
4236882
Link To Document