Title :
Alternative way for numerical steady-state analysis of forward-biased p-n junction devices
Author :
Leturcq, Ph. ; Yague, A. Munoz
Author_Institution :
Institut National des Sciences Appliquées de Toulouse, Toulouse, France
Abstract :
At large forward bias, quasineutrality holds in all regions of p-n devices. As a consequence, accurate numerical solutions of the transport equations can be obtained without involving the treatment of Poisson´s equation. A new approach is thus proposed which avoids convergence problems and excessive computation time in numerical studies of forward characteristics of p-n devices, rectifiers and thyristors.
Keywords :
p-n junctions; semiconductor device models; solid-state rectifiers; thyristors; forward biased p-n junction devices; numerical steady state analysis; rectifiers; thyristors; transport equations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750357