DocumentCode :
929745
Title :
Alternative way for numerical steady-state analysis of forward-biased p-n junction devices
Author :
Leturcq, Ph. ; Yague, A. Munoz
Author_Institution :
Institut National des Sciences Appliquées de Toulouse, Toulouse, France
Volume :
11
Issue :
19
fYear :
1975
Firstpage :
465
Lastpage :
466
Abstract :
At large forward bias, quasineutrality holds in all regions of p-n devices. As a consequence, accurate numerical solutions of the transport equations can be obtained without involving the treatment of Poisson´s equation. A new approach is thus proposed which avoids convergence problems and excessive computation time in numerical studies of forward characteristics of p-n devices, rectifiers and thyristors.
Keywords :
p-n junctions; semiconductor device models; solid-state rectifiers; thyristors; forward biased p-n junction devices; numerical steady state analysis; rectifiers; thyristors; transport equations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19750357
Filename :
4236882
Link To Document :
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