Title :
Domain transit-mode oscillation in planar-type Gunn device of InP
Author :
Nakamura, Yoshio ; Shibayama, Akinori ; Ohmi, Tadahiro
Author_Institution :
Oki Electric Industry Co. Ltd., Tokyo, Japan
Abstract :
Transit-mode Gunn oscillations with a peak-to-valley ratio of 2.1 in current waveforms were observed in planar-type devices of InP in a field ranging from 6 to 10 kV/cm. Even in 3-level theory, the effective diffusion coefficient is not large enough to suppress the buildup of high-field domains.
Keywords :
Contact resistance; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gunn devices; Indium phosphide; Oscillators; Schottky diodes; Semiconductor diodes; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9401
