DocumentCode
929748
Title
Domain transit-mode oscillation in planar-type Gunn device of InP
Author
Nakamura, Yoshio ; Shibayama, Akinori ; Ohmi, Tadahiro
Author_Institution
Oki Electric Industry Co. Ltd., Tokyo, Japan
Volume
62
Issue
1
fYear
1974
Firstpage
142
Lastpage
143
Abstract
Transit-mode Gunn oscillations with a peak-to-valley ratio of 2.1 in current waveforms were observed in planar-type devices of InP in a field ranging from 6 to 10 kV/cm. Even in 3-level theory, the effective diffusion coefficient is not large enough to suppress the buildup of high-field domains.
Keywords
Contact resistance; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gunn devices; Indium phosphide; Oscillators; Schottky diodes; Semiconductor diodes; Thermal resistance;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1974.9401
Filename
1451331
Link To Document