• DocumentCode
    929863
  • Title

    Reliability of MOS LSl circuits

  • Author

    Colbourne, E. Denis ; Coverley, Gordon P. ; Behera, Saroj K.

  • Author_Institution
    Bowmar Canada Ltd., Ottawa, Ont., Canada
  • Volume
    62
  • Issue
    2
  • fYear
    1974
  • Firstpage
    244
  • Lastpage
    259
  • Abstract
    MOS LSI circuits share many of the reliability problem associated with discrete semiconductors and medium-scale integrated circuits. However, because of the added complexity, larger chip size, and higher densities of MOS LSI circuits, different approaches are needed. A close working relationship between the designer, manufacturer, and user-the reliability triangle--is needed to generate the manufacturing controls, testing methods, and reliability assessment procedures and to optimize the performance and reliability of the MOS LSI circuits. Using this approach, the MOS LSI circuit, having more functions per external connection, can provide a more reliable system than one of equal complexity, based on discrete devices or less complex integrated circuits. Specific areas of reliability such as pattern sensitivity, manufacturing controls, assembly, packaging, and electrical testing have also been discussed.
  • Keywords
    Assembly; Circuit testing; Integrated circuit reliability; Large scale integration; MOSFETs; Manufacturing; Packaging; Random access memory; Semiconductor device manufacture; Semiconductor device reliability;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9412
  • Filename
    1451342