DocumentCode
929863
Title
Reliability of MOS LSl circuits
Author
Colbourne, E. Denis ; Coverley, Gordon P. ; Behera, Saroj K.
Author_Institution
Bowmar Canada Ltd., Ottawa, Ont., Canada
Volume
62
Issue
2
fYear
1974
Firstpage
244
Lastpage
259
Abstract
MOS LSI circuits share many of the reliability problem associated with discrete semiconductors and medium-scale integrated circuits. However, because of the added complexity, larger chip size, and higher densities of MOS LSI circuits, different approaches are needed. A close working relationship between the designer, manufacturer, and user-the reliability triangle--is needed to generate the manufacturing controls, testing methods, and reliability assessment procedures and to optimize the performance and reliability of the MOS LSI circuits. Using this approach, the MOS LSI circuit, having more functions per external connection, can provide a more reliable system than one of equal complexity, based on discrete devices or less complex integrated circuits. Specific areas of reliability such as pattern sensitivity, manufacturing controls, assembly, packaging, and electrical testing have also been discussed.
Keywords
Assembly; Circuit testing; Integrated circuit reliability; Large scale integration; MOSFETs; Manufacturing; Packaging; Random access memory; Semiconductor device manufacture; Semiconductor device reliability;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1974.9412
Filename
1451342
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