Title :
Comparison of boron and neon damage effects in boron ion-implanted resistors
Author_Institution :
General Motors Research Laboratories, Electronics Department, Warren, USA
Abstract :
Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10000 ¿/¿ range were obtained with low temperature and voltage sensitivities and good d.c. isolation.
Keywords :
ion beam effects; ion implantation; monolithic integrated circuits; resistors; B damage effects; Ne damage effects; Si; integrated circuit resistors; ion implanted resistors; sheet resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750375
