DocumentCode
929932
Title
Comparison of boron and neon damage effects in boron ion-implanted resistors
Author
MacIver, B.A.
Author_Institution
General Motors Research Laboratories, Electronics Department, Warren, USA
Volume
11
Issue
20
fYear
1975
Firstpage
484
Lastpage
485
Abstract
Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10000 ¿/¿ range were obtained with low temperature and voltage sensitivities and good d.c. isolation.
Keywords
ion beam effects; ion implantation; monolithic integrated circuits; resistors; B damage effects; Ne damage effects; Si; integrated circuit resistors; ion implanted resistors; sheet resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750375
Filename
4236901
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