Title :
C-band complementary TRAPATT diodes
Author :
Ying, R.S. ; Fong, T.T.
Author_Institution :
Hughes Research Laboratories, Torrance, Calif.
Abstract :
Complementary n+-p junction TRAPATT diodes have been fabricated for C-band operation. Peak power output as high as 27 W with 42.5-percent efficiency has been achieved at 7.2 GHz.
Keywords :
Bandwidth; Charge carrier processes; Electron traps; Fabrication; Frequency response; H infinity control; Ionization; Semiconductor diodes; Silicon; Substrates;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9422
