Title :
Fast photoluminescence modulation for optoelectronic applications
Author_Institution :
Ruhr-Universitÿt Bochum, Institut fÿr Elektronik, Bochum, West Germany
Abstract :
The principle of photoluminescence (p.l.) intensity modulation is demonstrated with near-bandgap p.l. of n GaAs bulk material. The p.l. is modulated by a semitransparent schottky barrier. Preliminary experimental results show the feasibility of fast p.l. pulse modulation (at 1 Mbit/s) and the applicability of this principle to optical signal transmission.
Keywords :
III-V semiconductors; Schottky effect; electro-optical effects; gallium arsenide; luminescence of inorganic solids; optical modulation; photoluminescence; n-GaAs; optical signal transmission; optoelectronic applications; photoluminescence intensity modulation; semitransparent Schottky barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750379
