• DocumentCode
    929966
  • Title

    Fast photoluminescence modulation for optoelectronic applications

  • Author

    Langmann, U.

  • Author_Institution
    Ruhr-Universitÿt Bochum, Institut fÿr Elektronik, Bochum, West Germany
  • Volume
    11
  • Issue
    20
  • fYear
    1975
  • Firstpage
    490
  • Lastpage
    491
  • Abstract
    The principle of photoluminescence (p.l.) intensity modulation is demonstrated with near-bandgap p.l. of n GaAs bulk material. The p.l. is modulated by a semitransparent schottky barrier. Preliminary experimental results show the feasibility of fast p.l. pulse modulation (at 1 Mbit/s) and the applicability of this principle to optical signal transmission.
  • Keywords
    III-V semiconductors; Schottky effect; electro-optical effects; gallium arsenide; luminescence of inorganic solids; optical modulation; photoluminescence; n-GaAs; optical signal transmission; optoelectronic applications; photoluminescence intensity modulation; semitransparent Schottky barrier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750379
  • Filename
    4236905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=929966