Title :
Empirical model of MOSFET breakdown voltages
Author :
Mitros, Jozef C.
Author_Institution :
National Semiconductor Co., Austin, TX, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
An additive model of drain-to-source current of a MOS transistor in the breakdown region is presented for the circuit-simulation SPICE program. An additional drain-to-source current is described by mixed quadratic and exponential formulas. Continuity of current and its first derivatives is assured. This guarantees a convergence of the Newton-Raphson algorithm used in SPICE. Variation of the drain-to-source breakdown voltage at Vgs=0 and of the injection-induced breakdown voltage at Vgs>V th with the gate-to-source voltage and the effective channel length is taken into account. Most of the model parameters have physical meanings and they are easily measurable
Keywords :
SPICE; electric breakdown of solids; insulated gate field effect transistors; semiconductor device models; MOS transistor; MOSFET; Newton-Raphson algorithm; additive model; breakdown voltages; circuit-simulation SPICE program; convergence; drain-to-source current; effective channel length; injection-induced breakdown; model parameters; Additives; Bipolar transistors; Breakdown voltage; Circuit simulation; Convergence; Electric breakdown; Integrated circuit measurements; MOSFET circuits; SPICE; Tunneling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
