DocumentCode
930127
Title
High-speed n-a1 GaAs-p-GaAs electroluminescent diodes
Author
Heinen, J. ; Harth, W.
Author_Institution
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik, Mÿnchen, West Germany
Volume
11
Issue
21
fYear
1975
Firstpage
512
Lastpage
513
Abstract
High-speed heterostructure-n-AlGaAs-p-GaAs electroluminescent diodes have been fabricated. Rise times of 2 ns and modulation cutoff frequencies of 360 MHz have been achieved.
Keywords
light emitting diodes; optical communication equipment; high speed heterostructure electroluminescence diode; modulation cutoff frequencies; n-AlGaAs-p-GaAs; rise times;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750395
Filename
4236922
Link To Document