• DocumentCode
    930147
  • Title

    Direct modulation of d.h. GaAlAs lasers with GaAs m.e.s.f.e.t.s

  • Author

    Ostoich, V. ; Jeppesen, P. ; Slaymaker, N.

  • Author_Institution
    Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
  • Volume
    11
  • Issue
    21
  • fYear
    1975
  • Firstpage
    515
  • Lastpage
    516
  • Abstract
    GaAs m.e.s.f.e.t.s are used to directly modulate d.h. GaAlAs lasers with a 200 Mbit/s pseudorandom, return-to-zero bit stream. The detected light pulses have 100% modulation depth, no significant intersymbol interference, 40 mW of peak power and risetimes and falltimes of 240 ps for a halfpower width of 280 ps.
  • Keywords
    III-V semiconductors; field effect transistors; optical modulation; semiconductor lasers; 200 Mbit/s pseudorandom return to zero bit stream; DH GaAlAs lasers; GaAs MESFETs; direct modulation; fall times; halfpower width; intersymbol interference; modulation depth; peak power; risetimes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750397
  • Filename
    4236924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930147