Title :
P-I-N Diodes for Low-Frequency High-Power Switching Applications
Author :
Caulton, Martin ; Rosen, Arye ; Stabile, Paul J. ; Gombar, Anna
Abstract :
The development of high-power low-frequency diodes, conditions for their operation, and results measured in actual circuits are described. Harmonic distortion at 500 kHz and 2 MHz has been found to decrease with increasing diode lifetime and forward-bias current. Large reverse bias voltages are necessary at low frequencies to keep the RF voltage swing from penetrating the forward conduction region. The improvement of p-i-n diode lifetimes with thicker I-layers or with planar construction has been studied and the performance of these diodes in a routing switch is reported.
Keywords :
Antennas and propagation; Frequency; Gallium arsenide; Laboratories; MESFETs; Microwave FETs; Microwave Theory and Techniques Society; Microwave theory and techniques; P-i-n diodes; Radar antennas;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1982.1131163
