DocumentCode
930289
Title
Comparison of Single- and Dual-Gate FET Frequency Doublers
Author
Gopinath, A. ; Seeds, Alwyn J. ; Rankin, J.B.
Volume
30
Issue
6
fYear
1982
Firstpage
919
Lastpage
920
Abstract
The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.
Keywords
Capacitance; Computational modeling; Computer simulation; Double-gate FETs; Frequency conversion; Microwave FETs; Microwave frequencies; Performance analysis; Performance gain; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1982.1131171
Filename
1131171
Link To Document