Title :
Comparison of Single- and Dual-Gate FET Frequency Doublers
Author :
Gopinath, A. ; Seeds, Alwyn J. ; Rankin, J.B.
Abstract :
The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.
Keywords :
Capacitance; Computational modeling; Computer simulation; Double-gate FETs; Frequency conversion; Microwave FETs; Microwave frequencies; Performance analysis; Performance gain; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1982.1131171
