Title :
Electron drift velocity model for simulation of InGaAs JFETs
Author :
Cordero, N. ; McCarthy, K. ; Lyden, C. ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. College Cork, Ireland
fDate :
8/1/1993 12:00:00 AM
Abstract :
Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/Vds behaviour of these devices. From comparison with experimental results, the authors conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor device models; simulation; I/V behaviour; InGaAs; JFETs; electron drift velocity field characteristic; model; two-dimensional numerical simulator;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
