High-power single-mode 2.0 mu m laser diodes

Author

Major, J.S., Jr. ; Nam, D.W. ; Osinski, J.S. ; Welch, D.F.

Author_Institution

SDL Inc., San Jose, CA, USA

Volume

5

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

733

Lastpage

734

Abstract

Data are presented on high-power single-mode index-guided laser diodes fabricated from a strained-layer InGaAs-InGaAsP double quantum well heterostructure epitaxial design. The total maximum power and external efficiency achieved are 50 mW and 43%, respectively. The far-field is measured to be 31 degrees by 46 degrees in the parallel and perpendicular directions, yielding an aspect ratio of 1.5 for the single-mode laser diode. The optical output of the laser diode is a multi-longitudinal mode spectrum spanning 1.98-2.00 mu m at an output power of 50 mW CW. The characteristic temperature of the laser diode is 48 K.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; 1.98 to 2.00 micron; 2.0 micron; 43 percent; 48 K; 50 mW; CW lasing; IR; InGaAs-InGaAsP; aspect ratio; double quantum well heterostructure epitaxial design; external efficiency; far-field; high-power; index-guided; laser diodes; multi-longitudinal mode spectrum; optical output; output power; semiconductors; single-mode; strained-layer; total maximum power; Conducting materials; Diode lasers; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical materials; Power generation; Solid lasers; Thermal conductivity; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.229788

Filename

229788