DocumentCode
930405
Title
Backdating in GaAs MESFET´s
Author
Kocot, Christopher ; Stolte, Charles A.
Volume
30
Issue
7
fYear
1982
Firstpage
963
Lastpage
968
Abstract
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr 2+ and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backdating, based on DLTS and spectral measurements, is presented. Calculations based on this model predict that closely compensated substrate material will minimize backgating. Preliminary experimental data support this prediction.
Keywords
Biomedical engineering; Buffer layers; Capacitance; Chromium; Electrons; Energy states; Gallium arsenide; Integrated circuit modeling; Lattices; MESFETs;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1982.1131184
Filename
1131184
Link To Document