Title :
Strained AlGaInAs/AlGaAs quantum wells and quantum-well lasers grown by molecular beam epitaxy
Author :
O´Keefe, Sean S. ; Schaff, William J. ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
Suitable growth conditions for strained AlGaInAs grown on GaAs substrates by molecular beam epitaxy (MBE) are presented, and strained layer multiple quantum well AlGaInAs lasers grown by MBE are demonstrated. Low-temperature photoluminescence was used to characterize quantum wells grown at different temperatures with different Al, Ga, and In compositions to establish growth parameters.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor lasers; AlGaInAs-AlGaAs; GaAs substrates; MBE; growth conditions; growth parameters; molecular beam epitaxy; photoluminescence; quantum-well lasers; semiconductor growth; strained QWs; Aluminum; Electrons; Gallium arsenide; Indium; Laser transitions; Laser tuning; Molecular beam epitaxial growth; Quantum well lasers; Substrates; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
