Title :
A DC-12 GHz Monolithic GaAsFET Distributed Amplifier
Author :
Strid, Eric W. ; Gleason, K. Reed
Abstract :
A monolithic balanced traveling-wave amplifier stage using GaAs MESFET´s is demonstrated. The amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 X0.97-mm die. Its gain versus frequency is very flat, and |S 11|, |S 12|, and |S 22| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.
Keywords :
Bandwidth; Distributed amplifiers; Frequency measurement; Gain measurement; Gallium arsenide; MESFETs; Microwave FETs; Probes; Scattering parameters; Topology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1982.1131185
