• DocumentCode
    930422
  • Title

    A DC-12 GHz Monolithic GaAsFET Distributed Amplifier

  • Author

    Strid, Eric W. ; Gleason, K. Reed

  • Volume
    30
  • Issue
    7
  • fYear
    1982
  • Firstpage
    969
  • Lastpage
    975
  • Abstract
    A monolithic balanced traveling-wave amplifier stage using GaAs MESFET´s is demonstrated. The amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 X0.97-mm die. Its gain versus frequency is very flat, and |S 11|, |S 12|, and |S 22| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.
  • Keywords
    Bandwidth; Distributed amplifiers; Frequency measurement; Gain measurement; Gallium arsenide; MESFETs; Microwave FETs; Probes; Scattering parameters; Topology;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1982.1131185
  • Filename
    1131185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930422