Low threshold InGaAs/GaAs 45 degrees folded cavity surface-emitting laser grown on structured substrates

Author

Frateschi, N.C. ; Dapkus, P.D. ; Ou, S.S. ; Yang, J.J. ; Jansen, M.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

5

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

741

Lastpage

743

Abstract

A novel folded cavity surface-emitting laser structure integrating a horizontal cavity InGaAs/GaAs laser grown on a structured substrate with a high reflectivity Bragg reflector has been fabricated. Devices with threshold currents of 8 mA and CW wall plug efficiencies at 5% at 6 mW output power have been demonstrated at a wavelength of 0.99 mu m. By combining a cleaved uncoated mirror with the 45 degrees deflecting mirror the authors have obtained threshold current as low as 5 mA for a device 450 mu m long.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; mirrors; reflectivity; semiconductor lasers; 0.99 micron; 450 micron; 5 mA; 5 percent; 6 mW; 8 mA; CW wall plug efficiencies; IR; InGaAs-GaAs; cleaved uncoated mirror; deflecting mirror; folded cavity; high reflectivity Bragg reflector; horizontal cavity; low threshold; semiconductor laser diodes; structured substrates; surface-emitting laser; threshold current; Gallium arsenide; Indium gallium arsenide; Mirrors; Optical surface waves; Power generation; Quantum well lasers; Reflectivity; Substrates; Surface emitting lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.229791

Filename

229791