Title :
Deep-level defects in red GaAs1-xPxlight-emitting diodes
Author :
Forbes, L. ; Vaughn, C.K.
Author_Institution :
University of Arkansas, Fayetteville, Ark.
fDate :
4/1/1974 12:00:00 AM
Abstract :
A wide variety of deep-level recombination centers have been observed at large concentrations in commercially available red GaAsP light-emitting diode p-n junctions. Similar defects have not been observed in GaP diodes. The characteristics, probable cause, and possible effect on luminescence efficiency of these deep-level defect centers are described.
Keywords :
Capacitance; Charge carrier lifetime; Electron traps; Energy states; Gallium arsenide; Lattices; Light emitting diodes; Photonic band gap; Substrates; Zinc;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9468
