Title :
CW operation of monolithic arrays of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers
Author :
Donnelly, J.P. ; Goodhue, W.D. ; Wang, C.A. ; Bailey, R.J. ; Lincoln, G.A. ; Johnson, G.D. ; Missaggia, L.J. ; Walpole, J.N.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
A monolithic 0.84-cm/sup 2/ two-dimensional array of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers was mounted junction up on a W/Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Each laser in the array contained two upward-deflecting internal-cavity 45 degrees mirrors which were etched using chlorine ion-beam-assisted etching, and two top-surface facets. The CW threshold current densities of different sections of the array were or=30%. A CW output power of over 40 W was obtained from the entire array, while a current-limited output power density of 84 W/cm/sup 2/ with an average temperature rise of approximately 30 degrees C was obtained from a quarter of the array.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; semiconductor laser arrays; 2D laser diode arrays; 30 percent; 40 W; CW operation; CW output power; CW threshold current densities; Cl; InGaAs-AlGaAs; W-Cu; average temperature rise; continuous-wave; current-limited output power density; diode lasers; effective CW differential quantum efficiencies; etched; folded-cavity; ion-beam-assisted etching; junction up mounted; laser accessories; microchannel heatsink; monolithic arrays; semiconductors; surface-emitting; top-surface facets; upward-deflecting internal-cavity 45 degrees mirrors; Diode lasers; Etching; Indium gallium arsenide; Microchannel; Mirrors; Optical arrays; Power generation; Semiconductor laser arrays; Surface emitting lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
