Title :
Noise measure and temperature effect in small-signal GaAs IMPATT amplifiers
Author :
Borgne, A. Le ; Perichon, R. ; Constant, E.
Author_Institution :
Université des Sciences et Techniques, Villeneuve D´´Ascq, France
fDate :
4/1/1974 12:00:00 AM
Abstract :
For two kinds of GaAs IMPATT diodes (flat and two-step doping profile) it is shown that an improved experimental noise measure is obtained by increasing temperature. This can be chiefly explained by a large decrease of GaAs electron saturated drift velocity, as temperature is increased.
Keywords :
Capacitance; Charge carrier processes; Electron emission; Electron traps; Energy states; Gallium arsenide; Gold; Noise measurement; Schottky diodes; Temperature measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9469
