Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers

Author

Mathur, Atul ; Osinski, Julian S. ; Grodzinski, Piotr ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

5

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

753

Lastpage

755

Abstract

A study of the effects of biaxial strain on the performance of low-threshold 1.3- mu m In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm/sup 2/ for a two-quantum-well device with 0.85% compressive strain were obtained.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.3 micron; IR; InGaAsP-InP; biaxial strain; compressive-strained; device parameters; lattice-matched quantum-well lasers; low-threshold; strained QW lasers; tensile-strained; threshold current densities; two-quantum-well device; Capacitive sensors; Indium phosphide; Laser transitions; Lattices; Optical design; Optical materials; Optical sensors; Quantum well lasers; Radiative recombination; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.229795

Filename

229795