• DocumentCode
    930487
  • Title

    Depletion m.o.s. power transistors

  • Author

    Farzan, B. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    11
  • Issue
    23
  • fYear
    1975
  • Firstpage
    565
  • Lastpage
    566
  • Abstract
    A new depletion m.o.s. transistor is proposed. The structure uses anisotropic etching to define the channel in an n¿p epitaxial silicon slice. The fabrication, characteristics and power capabilities of the device are discussed.
  • Keywords
    field effect transistors; power transistors; anisotropic etching; depletion MOS power transistor; n-p epitaxial Si slice;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750431
  • Filename
    4236960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930487