Ultra-Broad-Band GaAs Monolithic Amplifier

GaAs monolithic IC design and fabrication techniques suitable for baseband pulse amplification have been developed. The developed GaAs monolithic amplifier has a two-stage construction using two source-grounded FET´s. To reduce input VSWR without serious noise-figure degradation, an inter-gate-drain negative feedback circuit was adopted. An interstage circuit is a dc-coupled circuit consisting of an appropriate impedance transmission line. Gate voltage for the second-stage FET is self-biased. The amplifier has 13.5-dB gain over the 3-dB bandwidth from below 500 MHz to 2.8 GHz. Less than 6-dB (7-dB) noise figure was obtained from 700 MHz to 2.2 GHz (150 MHz to 3 GHz). Input VSWR is less than 1.5