DocumentCode
930537
Title
A small-signal frequency response model with electron and hole transports in multiquantum-well lasers
Author
Suzuki, Nobuo ; Ishikawa, Masayuki
Author_Institution
Toshiba Corp., Kawasaki, Japan
Volume
5
Issue
7
fYear
1993
fDate
7/1/1993 12:00:00 AM
Firstpage
767
Lastpage
770
Abstract
The authors propose a small-signal frequency response model for high-speed multi-quantum-well (MQW) lasers. Electrons and holes are treated independently to deal with the high-frequency range faster than the carrier thermionic emission from the well, where the ambipolar approximation is unsuitable. The electron current modulates the stimulated emission even in the high-frequency range beyond the hole transport limit. Therefore, the present model predicts a larger response than the conventional ambipolar model in the high-frequency range, and it gives a better explanation of the experimental results for high-speed MQW lasers.<>
Keywords
approximation theory; frequency response; laser theory; semiconductor device models; semiconductor lasers; stimulated emission; ambipolar approximation; carrier mobility; carrier thermionic emission; electron current; electron transport; high-frequency range; high-speed; high-speed MQW lasers; hole transports; multiquantum-well lasers; optical modulation; small-signal frequency response model; stimulated emission; Charge carrier processes; Electron emission; Frequency response; Laser modes; Niobium; Predictive models; Quantum well devices; Quantum well lasers; Spontaneous emission; Thermionic emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.229800
Filename
229800
Link To Document