• DocumentCode
    930537
  • Title

    A small-signal frequency response model with electron and hole transports in multiquantum-well lasers

  • Author

    Suzuki, Nobuo ; Ishikawa, Masayuki

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    5
  • Issue
    7
  • fYear
    1993
  • fDate
    7/1/1993 12:00:00 AM
  • Firstpage
    767
  • Lastpage
    770
  • Abstract
    The authors propose a small-signal frequency response model for high-speed multi-quantum-well (MQW) lasers. Electrons and holes are treated independently to deal with the high-frequency range faster than the carrier thermionic emission from the well, where the ambipolar approximation is unsuitable. The electron current modulates the stimulated emission even in the high-frequency range beyond the hole transport limit. Therefore, the present model predicts a larger response than the conventional ambipolar model in the high-frequency range, and it gives a better explanation of the experimental results for high-speed MQW lasers.<>
  • Keywords
    approximation theory; frequency response; laser theory; semiconductor device models; semiconductor lasers; stimulated emission; ambipolar approximation; carrier mobility; carrier thermionic emission; electron current; electron transport; high-frequency range; high-speed; high-speed MQW lasers; hole transports; multiquantum-well lasers; optical modulation; small-signal frequency response model; stimulated emission; Charge carrier processes; Electron emission; Frequency response; Laser modes; Niobium; Predictive models; Quantum well devices; Quantum well lasers; Spontaneous emission; Thermionic emission;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.229800
  • Filename
    229800