• DocumentCode
    930538
  • Title

    Domain width in a dielectrically loaded Gunn diode

  • Author

    Lee, R.E.

  • Author_Institution
    Hewlett Packard Laboratories, Palo Alto, USA
  • Volume
    11
  • Issue
    24
  • fYear
    1975
  • Firstpage
    569
  • Lastpage
    570
  • Abstract
    The width of the travelling high-field domain in a Gunn diode has been determined for a device with one surface loaded by a dielectric material (LiNbO3). The domain width inferred from the shape of the acoustic pulse that is generated in the adjacent piezoelectric dielectric material.
  • Keywords
    Gunn diodes; electric domains; high field effects; LiNbO3; acoustic pulse; dielectrically loaded Gunn diode; piezoelectric dielectric material; travelling high field domain width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750436
  • Filename
    4236966