Title :
Domain width in a dielectrically loaded Gunn diode
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, USA
Abstract :
The width of the travelling high-field domain in a Gunn diode has been determined for a device with one surface loaded by a dielectric material (LiNbO3). The domain width inferred from the shape of the acoustic pulse that is generated in the adjacent piezoelectric dielectric material.
Keywords :
Gunn diodes; electric domains; high field effects; LiNbO3; acoustic pulse; dielectrically loaded Gunn diode; piezoelectric dielectric material; travelling high field domain width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750436
