• DocumentCode
    930555
  • Title

    GaAs m.e.s.f.e.t. linear power-amplifier stage giving 1 W

  • Author

    Camisa, R.L. ; Goel, J. ; Drukier, I.

  • Author_Institution
    RCA Laboratories, David Sarnoff Research Centre, Princeton, USA
  • Volume
    11
  • Issue
    24
  • fYear
    1975
  • Firstpage
    572
  • Lastpage
    573
  • Abstract
    A balanced GaAs m.e.s.f.e.t. power stage has been developed for the 7¿8 GHz satellite communication frequency band. At 7.5 GHz, the output power at 1 dB comparession 1 W with a power added efficiency of 37%. The small-signal gain was 6.65 ± 0.45 dB across the frequency band. The small-signal gain, phase, group delay and input and output v.s.w.r. as function of frequency are described. Large-signal gain saturation and 3rd-order intermodulation distrotion measurements are also presented.
  • Keywords
    field effect transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 3rd order intermodulation distortion; 7-8 GHz satellite communication frequency band; GaAs MESFET linear power amplifier stage; group delay; large signal gain saturation; output power; power added efficiency; small signal gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750438
  • Filename
    4236968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930555