Title :
GaAs m.e.s.f.e.t. linear power-amplifier stage giving 1 W
Author :
Camisa, R.L. ; Goel, J. ; Drukier, I.
Author_Institution :
RCA Laboratories, David Sarnoff Research Centre, Princeton, USA
Abstract :
A balanced GaAs m.e.s.f.e.t. power stage has been developed for the 7¿8 GHz satellite communication frequency band. At 7.5 GHz, the output power at 1 dB comparession 1 W with a power added efficiency of 37%. The small-signal gain was 6.65 ± 0.45 dB across the frequency band. The small-signal gain, phase, group delay and input and output v.s.w.r. as function of frequency are described. Large-signal gain saturation and 3rd-order intermodulation distrotion measurements are also presented.
Keywords :
field effect transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 3rd order intermodulation distortion; 7-8 GHz satellite communication frequency band; GaAs MESFET linear power amplifier stage; group delay; large signal gain saturation; output power; power added efficiency; small signal gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750438
