Title :
Fast and nondestructive method of C(V) profiling of thin semiconductor layers on an insulating substrate
Author_Institution :
Laboratoires d´Ã\x89lectronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
A method of C(V) profiling using only two mercury Schottky diodes is described. It allows fast profiles of doping level and conductivity of thin semiconductor layers on insulating substrates to be made, without any damage on the surface. This makes the method useful for wafer mapping in concentration, thickness and conductivity.
Keywords :
capacitance measurement; semiconductor doping; semiconductor-insulator boundaries; C(V) profiling; Hg Schottky diodes; conductivity; doping level; insulating substrate; nondestructive method; thin semiconductor layers; wafer mapping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750444
