• DocumentCode
    930604
  • Title

    Fast and nondestructive method of C(V) profiling of thin semiconductor layers on an insulating substrate

  • Author

    Binet, M.

  • Author_Institution
    Laboratoires d´Ã\x89lectronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    11
  • Issue
    24
  • fYear
    1975
  • Firstpage
    580
  • Lastpage
    581
  • Abstract
    A method of C(V) profiling using only two mercury Schottky diodes is described. It allows fast profiles of doping level and conductivity of thin semiconductor layers on insulating substrates to be made, without any damage on the surface. This makes the method useful for wafer mapping in concentration, thickness and conductivity.
  • Keywords
    capacitance measurement; semiconductor doping; semiconductor-insulator boundaries; C(V) profiling; Hg Schottky diodes; conductivity; doping level; insulating substrate; nondestructive method; thin semiconductor layers; wafer mapping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750444
  • Filename
    4236973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930604