Title :
Integrated optical switches in silicon based on SiGe-waveguides
Author :
Fischer, U. ; Schüppert, B. ; Petermann, K.
Author_Institution :
Inst. fuer Hochfrequenztech., Tech. Univ. Berlin., Germany
fDate :
7/1/1993 12:00:00 AM
Abstract :
The realization of switches in silicon base on monomode Ge-indiffused SiGe waveguides is reported. At a wavelength of 1.3 mu m a Mach-Zehnder interferometer switch with a modulation depth of -10 dB at a current of 150 mA is obtained. This is the lowest value reported so far for single-mode optical switches in silicon.<>
Keywords :
Ge-Si alloys; diffusion in solids; integrated optics; light interferometers; optical switches; optical waveguides; 1.3 micron; 150 mA; Ge-indiffused; IR; Mach-Zehnder interferometer switch; Si base; SiGe; integrated optical switches; modulation depth; monomode waveguides; single-mode optical switches; Charge carrier processes; Integrated optics; Manufacturing processes; Nonlinear optics; Optical buffering; Optical materials; Optical refraction; Optical switches; Optical waveguides; Silicon;
Journal_Title :
Photonics Technology Letters, IEEE
