Title :
Monolithically integrated SQW laser and HBT laser driver via selective OMVPE regrowth
Author :
Slater, David B., Jr. ; Enquist, Paul M. ; Hutchby, James A. ; Reed, Frederick E. ; Morris, Arthur S. ; Kolbas, Robert M. ; Trew, Robert J. ; Lujan, Alexandre S. ; Swart, Jacobus W.
Author_Institution :
Research Triangle Inst., Research Triangle Park, NC, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
An AlGaAs/GaAs nan heterojunction bipolar transistor (HBT) laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index single-quantum-well (SQW) laser have been laterally integrated to maintain surface planarity using selective organometallic vapor-phase epitaxy (OMVPE) regrowth of the HBT. The self-aligned HBTs exhibit a DC current gain of 30 and an f/sub t/ (f/sub max/) of 45(60) GHz. The 980-nm lasers exhibit room-temperature threshold current densities as low as 420
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 10 Gbit/s; 980 nm; AlGaAs-GaAs; CW lasing; DC current gain; HBT laser; IR; SPICE simulations; SQW laser; graded index; laser driver circuit; laterally integrated; monolithic integration; nan heterojunction bipolar transistor; operating speeds; pulsed lasing; room-temperature threshold current densities; selective OMVPE regrowth; selective organometallic vapor-phase epitaxy; semiconductors; series resistance; single-quantum-well; surface planarity; Detectors; Driver circuits; FETs; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Monolithic integrated circuits; Optical losses; Optical receivers; Surface topography;
Journal_Title :
Photonics Technology Letters, IEEE
