• DocumentCode
    930724
  • Title

    Efficiency versus doping profile in GaAs read-type IMPATT diodes

  • Author

    Hasegawa, F. ; Aono, Y.

  • Author_Institution
    University of Sheffield, Sheffield, England
  • Volume
    62
  • Issue
    5
  • fYear
    1974
  • fDate
    5/1/1974 12:00:00 AM
  • Firstpage
    641
  • Lastpage
    643
  • Abstract
    The influence of doping profile on the efficiency of GaAs Read-type IMPATT diodes has been studied experimentally. A diode with low breakdown voltage, or a diode with a low bias field in the drift region, gave the highest efficiency. The mechanism will be discussed, estimating the restriction of RF voltage amplitude and the change of phase relation between RF current and voltage.
  • Keywords
    Circuit stability; Circuit testing; Diodes; Doping profiles; Frequency; Gallium arsenide; Oscillators; Switches; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9491
  • Filename
    1451421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930724