• DocumentCode
    930852
  • Title

    2.33 μm-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE

  • Author

    Sato, T. ; Mitsuhara, M. ; Kondo, Y.

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi
  • Volume
    43
  • Issue
    21
  • fYear
    2007
  • Firstpage
    1143
  • Lastpage
    1144
  • Abstract
    An emission wavelength of 2.33 mum in an InAs/InGaAs multiple-quantum-well laser grown by metal-organic vapour phase epitaxy is reported. The laser had an output power above 10 mW under continuous-wave operation at temperatures between 15 and 45degC. High-temperature operation up to 50degC and a characteristic temperature of 51 K were also confirmed.
  • Keywords
    III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; laser beams; quantum well lasers; vapour phase epitaxial growth; InAs-InGaAs; emission wavelength; metal-organic vapour phase epitaxy; multiple-quantum-well lasers; temperature 15 degC to 45 degC; temperature 51 K; threshold current density; wavelength 2.33 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20072257
  • Filename
    4349254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930852