Title :
2.33 μm-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE
Author :
Sato, T. ; Mitsuhara, M. ; Kondo, Y.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Abstract :
An emission wavelength of 2.33 mum in an InAs/InGaAs multiple-quantum-well laser grown by metal-organic vapour phase epitaxy is reported. The laser had an output power above 10 mW under continuous-wave operation at temperatures between 15 and 45degC. High-temperature operation up to 50degC and a characteristic temperature of 51 K were also confirmed.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; laser beams; quantum well lasers; vapour phase epitaxial growth; InAs-InGaAs; emission wavelength; metal-organic vapour phase epitaxy; multiple-quantum-well lasers; temperature 15 degC to 45 degC; temperature 51 K; threshold current density; wavelength 2.33 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072257
