• DocumentCode
    930853
  • Title

    Acoustic-surface-wave convolver on epitaxial gallium arsenide

  • Author

    Spiermann, A.O.W.

  • Author_Institution
    Technical University of Denmark, Physics Laboratory III, Lyngby, Denmark
  • Volume
    11
  • Issue
    25
  • fYear
    1975
  • Firstpage
    614
  • Lastpage
    615
  • Abstract
    A meander-gate field-effect transistor on epitaxial GaAs is used as an acoustic-surface-wave convolver. A bilinear coefficient as high as 2×10¿4 mW¿1 has been measured at 260 MHz. The active area is only 1.8 mm long and the acoustic beam width is 0.7 mm.
  • Keywords
    acoustic surface wave devices; field effect transistors; signal processing; GaAs; acoustic surface wave convolver; bilinear coefficient; meander gate FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750468
  • Filename
    4236998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=930853