Title :
Acoustic-surface-wave convolver on epitaxial gallium arsenide
Author :
Spiermann, A.O.W.
Author_Institution :
Technical University of Denmark, Physics Laboratory III, Lyngby, Denmark
Abstract :
A meander-gate field-effect transistor on epitaxial GaAs is used as an acoustic-surface-wave convolver. A bilinear coefficient as high as 2×10¿4 mW¿1 has been measured at 260 MHz. The active area is only 1.8 mm long and the acoustic beam width is 0.7 mm.
Keywords :
acoustic surface wave devices; field effect transistors; signal processing; GaAs; acoustic surface wave convolver; bilinear coefficient; meander gate FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750468
