Title :
Static characteristics of extremely thin gate oxide m.o.s. transistors
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Abstract :
The drain current of an extremely thin gate oxide m.o.s. transistor shows an exponential dependence both on drain voltage and gate voltage, even in the `postthreshold¿ region. The input gate current of a device with 20 Å gate oxide is estimated to be negligible for a logic-circuit operation with 0.2 V supply voltage.
Keywords :
field effect transistors; MOST; drain current; extremely thin gate oxide; static characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750471
