DocumentCode
930983
Title
Electronic Raman scattering from holes in InAs/GaAs self-assembled quantum dots
Author
Aslan, B. ; Lockwood, D.J. ; Wasilewski, Z.R. ; Liu, H.C.
Author_Institution
Inst. for Microstruct. Sci., Nat. Res. Council, Ottawa, ON
Volume
43
Issue
21
fYear
2007
Firstpage
1162
Lastpage
1163
Abstract
A report is presented on the observation of hole excitations in unintentionally p-doped self-assembled InAs/GaAs quantum dots by resonant Raman spectroscopy. The small difference in the valence intraband energy values obtained by Raman and PL spectra is explained by the Coulomb interaction between electrons and holes. However, the reason why the maximum resonance occurs at a slightly higher energy than that of the hole excitation seen in Raman spectra is unknown.
Keywords
III-V semiconductors; Raman spectra; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; valence bands; Coulomb interaction; InAs-GaAs; electronic Raman scattering; hole excitation; photoluminescence; resonant Raman spectroscopy; self-assembled quantum dots; valence intraband energy values;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20072025
Filename
4349266
Link To Document