DocumentCode :
931012
Title :
A 32 K ASIC synchronous RAM using a two-transistor basic cell
Author :
Yuen, Alex ; Tsao, Peter ; Yin, Patrick ; Yuen, Albert T.
Author_Institution :
LSI Logic Corp., Milpitas, CA, USA
Volume :
24
Issue :
1
fYear :
1989
Firstpage :
57
Lastpage :
61
Abstract :
A 32 K synchronous RAM using a two-transistor basic cell has been developed for use with a 100 K compact gate array. The basic cell consists of only two transfer gates and a storage capacitor and thus results in a very dense memory array. The RAM operates as a static RAM during system operations and provides both serial and parallel data ports. It can be reconfigured into 1 K*32, 2 K*16, 4 K*8, etc. depending on the system needs. An access time of 40 ns was achieved for a test chip at an operating power of 175 mW.<>
Keywords :
CMOS integrated circuits; VLSI; application specific integrated circuits; integrated circuit technology; integrated memory circuits; logic arrays; random-access storage; 100 K compact gate array; 175 mW; 2 T cell; 32 K synchronous RAM; 32 kbit; 4 ns; ASIC; CMOS; HCMOS; access time; dense memory array; operating power; parallel data ports; reconfigurable; serial data ports; static RAM; storage capacitor; system operations; test chip; two-transistor basic cell; Application specific integrated circuits; Capacitance; Capacitors; Degradation; Delay; Latches; Random access memory; Read-write memory; Testing;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.16302
Filename :
16302
Link To Document :
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