Title :
Dynamic modelling of nonlinear microwave devices
Author_Institution :
Central Res. Labs., Thorn EMI, Hayes, UK
Abstract :
An improved technique is presented here for modelling the dynamic large-signal properties of microwave devices such as GaAs MESFETs. The method is based on repeated harmonic balance analysis of a simple nonlinear circuit. Many of the sources of inconsistency in established modelling methods have been avoided, making more reliable circuit analysis possible.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; GaAs; MESFETs; circuit analysis; large-signal properties; nonlinear microwave devices; repeated harmonic balance analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890830
