Title :
High-power (1W,CW) single-lobe operation of LPE-grown GaInAsP/GaInP ( lambda =0.8 mu m) separate-confinement single-quantum-well broad-area lasers
Author :
Garbuzov, D.Z. ; Rafailov, E.U. ; Strugov, N.A. ; Gavrilovic, P.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst., Acad. of Sci., Leningrad, USSR
Abstract :
Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100 mu m-wide stripes that were fabricated from these structures emit over 1 W of optical power per facet at a wavelength of 0.8 mu m in continuous room-temperature operation. A stable single-lobed far-field pattern with a beam divergence as low as 0.6 degrees is obtained in pulsed operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 0.8 micron; 1 W; 100 micron; GaInAsP-GaInP; LPE; beam divergence; continuous room-temperature operation; optical power; separate-confinement single-quantum-well broad-area lasers; stable single-lobed far-field pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890831
