Title :
Characteristic temperature of GaInP/AlGaInP single quantum well lasers
Author :
Bour, D.P. ; Carlson, N.W. ; Evans, G.A.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
The characteristic temperature T0 of AlGaInP quantum well lasers is measured. T0 values fall between 50 and 70 K, with only a slight decrease for short-cavity devices, suggesting the insignificance of Auger recombination in these high-bandgap alloys. The low T0 values are likely to be due to the weak carrier confinement afforded by the structure.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 50 to 70 K; Auger recombination; GaInP-AlGaInP; characteristic temperature; high-bandgap alloys; short-cavity devices; single quantum well lasers; weak carrier confinement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890834
