Title :
GaAs planar Gunn digital devices by sulphur-ion implantation
Author :
Mizutani, Tomoko ; Kurumada, K.
Author_Institution :
NTT, Electrical Communication Laboratory, Musashino, Japan
Abstract :
Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions.
Keywords :
Gunn devices; III-V semiconductors; gallium arsenide; ion implantation; semiconductor device manufacture; GaAs planar Gunn digital devices; S ion implantation; gate trigger sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750486
