DocumentCode
931366
Title
Reduced temperature sensitivity of lasing wavelength in near-1.3 μ InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer
Author
Liu, H.Y. ; Badcock, T.J. ; Jin, C.Y. ; Nabavi, E. ; Groom, K.M. ; Hopkinson, M. ; Mowbray, D.J.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
Volume
43
Issue
12
fYear
2007
Firstpage
670
Lastpage
672
Abstract
An InGaAs strain-reducing capping layer with a stepped composition is shown to significantly reduce the temperature sensitivity of the lasing wavelength in a 1.3 mum InAs/GaAs quantum-dot laser. With this technique, the sensitivity is reduced from 0.48 nm/K for a laser with standard capping layer to 0.11 nm/K for the new design over the temperature range 20-130degC
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; 1.3 micron; 20 to 130 C; InAs-GaAs; lasing wavelength; quantum-dot laser; reduced temperature sensitivity; stepped composition; strain-reducing capping layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20070716
Filename
4237051
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