• DocumentCode
    931465
  • Title

    Quantum-confined stark effect and ultrafast absorption dynamics in bilayer inas quantum dot waveguide

  • Author

    Malins, D.B. ; Gomez-Iglesias, A. ; Spencer, P. ; Clarke, E. ; Murray, R. ; Miller, A.

  • Author_Institution
    Sch. of Phys. & Astron., Univ. of St. Andrews
  • Volume
    43
  • Issue
    12
  • fYear
    2007
  • Firstpage
    686
  • Lastpage
    688
  • Abstract
    A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V. Such favourable properties are desirable for intensity and phase modulators
  • Keywords
    III-V semiconductors; Stark effect; gallium arsenide; indium compounds; optical waveguides; optoelectronic devices; quantum dots; ridge waveguides; -8 V; 1340 nm; 40 nm; 7 ps; InAs-GaAs; Stark effect; phase modulators; quantum dot ridge waveguide; ultrafast absorption dynamics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071221
  • Filename
    4237061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931465