Title :
Negative resistance of a modified insulated-gate field-effect transistor
Author :
Lehovec, Kurt ; Zuleeg, R.
Author_Institution :
University of Southern California, Los Angeles, Calif.
Abstract :
The current-voltage characteristics of a new circuit element showing negative resistance are described and analyzed. The device is an enhancement field-effect transistor interacting with a bipolar transistor.
Keywords :
Breakdown voltage; Diodes; Equivalent circuits; FETs; Frequency response; Insulation; Network synthesis; Resistors; Roentgenium; Transconductance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9575
