• DocumentCode
    931650
  • Title

    Negative resistance of a modified insulated-gate field-effect transistor

  • Author

    Lehovec, Kurt ; Zuleeg, R.

  • Author_Institution
    University of Southern California, Los Angeles, Calif.
  • Volume
    62
  • Issue
    8
  • fYear
    1974
  • Firstpage
    1163
  • Lastpage
    1165
  • Abstract
    The current-voltage characteristics of a new circuit element showing negative resistance are described and analyzed. The device is an enhancement field-effect transistor interacting with a bipolar transistor.
  • Keywords
    Breakdown voltage; Diodes; Equivalent circuits; FETs; Frequency response; Insulation; Network synthesis; Resistors; Roentgenium; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9575
  • Filename
    1451505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931650